Electron-phonon scattering in transport properties of InSe single crystals
Identifieur interne : 000690 ( Main/Exploration ); précédent : 000689; suivant : 000691Electron-phonon scattering in transport properties of InSe single crystals
Auteurs : RBID : ISTEX:11544_1985_Article_BF02451897.pdfEnglish descriptors
Abstract
The electron-phonon scattering in indium selenide single crystals has been investigated by Hall-mobility and Raman-spectroscopy measurements. The experimental data have been interpreted according to the Fivaz and Schmid model for homopolar optical scattering. The best fit of the experimental results is obtained by assuming the bidimensional behaviour of the interaction involving anA1phonon with energy 14.5 meV. The bidimensional character is probably due to the presence of a large number of planar defects, confirmed by electron microscope observations, which strongly localize the carriers within the layers.
DOI: 10.1007/BF02451897
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Electron-phonon scattering in transport properties of InSe single crystals</title><author><name>R. Cingolani</name><affiliation wicri:level="1"><mods:affiliation>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Bari, Italia</mods:affiliation><country xml:lang="fr">Italie</country><wicri:regionArea>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Bari</wicri:regionArea><wicri:noRegion>Bari</wicri:noRegion></affiliation></author><author><name>L. Vasanelli</name><affiliation wicri:level="1"><mods:affiliation>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Bari, Italia</mods:affiliation><country xml:lang="fr">Italie</country><wicri:regionArea>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Bari</wicri:regionArea><wicri:noRegion>Bari</wicri:noRegion></affiliation></author><author><name>A. Rizzo</name><affiliation wicri:level="1"><mods:affiliation>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Lecce, Italia</mods:affiliation><country xml:lang="fr">Italie</country><wicri:regionArea>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Lecce</wicri:regionArea><wicri:noRegion>Lecce</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11544_1985_Article_BF02451897.pdf</idno><date when="1985">1985</date><idno type="doi">10.1007/BF02451897</idno><idno type="wicri:Area/Main/Corpus">000065</idno><idno type="wicri:Area/Main/Curation">000065</idno><idno type="wicri:Area/Main/Exploration">000690</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Scattering mechanisms</term><term>Theory of electronic transport</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The electron-phonon scattering in indium selenide single crystals has been investigated by Hall-mobility and Raman-spectroscopy measurements. The experimental data have been interpreted according to the Fivaz and Schmid model for homopolar optical scattering. The best fit of the experimental results is obtained by assuming the bidimensional behaviour of the interaction involving anA1phonon with energy 14.5 meV. The bidimensional character is probably due to the presence of a large number of planar defects, confirmed by electron microscope observations, which strongly localize the carriers within the layers.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="0c2fed136956a29b75f4bdeee5720aa3c3085cfd"><titleInfo lang="eng"><title>Electron-phonon scattering in transport properties of InSe single crystals</title></titleInfo><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Cingolani</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Bari, Italia</affiliation></name><name type="personal"><namePart type="given">L.</namePart><namePart type="family">Vasanelli</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Bari, Italia</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Rizzo</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Dipartimento di Fisica dell'Università, Unità G.N.S.M./C.I.S.M., Lecce, Italia</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1985-04-22</dateCreated><dateValid encoding="w3cdtf">2006-06-24</dateValid><copyrightDate encoding="w3cdtf">1985</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The electron-phonon scattering in indium selenide single crystals has been investigated by Hall-mobility and Raman-spectroscopy measurements. The experimental data have been interpreted according to the Fivaz and Schmid model for homopolar optical scattering. The best fit of the experimental results is obtained by assuming the bidimensional behaviour of the interaction involving anA1phonon with energy 14.5 meV. The bidimensional character is probably due to the presence of a large number of planar defects, confirmed by electron microscope observations, which strongly localize the carriers within the layers.</abstract><abstract lang="ita">In questo lavoro è riportato uno studio dell'interazione elettrone-fonone in monocristalli di seleniuro di indio, condotto mediante misure di effetto Hall e spettroscopia Raman. I dati sperimentali sono stati interpretati secondo il modello di Fivaz e Schmid, per lo scattering da fononi ottici omopolari. L'approssimazione migliore delle curve sperimentali è ottenuta assumendo un carattere bidimensionale per l'interazione tra gli elettroni ed i fononi, nel modoA1, con energia 14.5 meV. Il carattere bidimensionale delle proprietà di trasporto è probabilmente dovuto alla presenza di difetti planari che localizzano i portatori di carica all'interno degli strati.</abstract><abstract lang="und">Исследуется электрон-фононное рассеяние в монокристаллах InSe, используя измерения подвижности Холла и спектроскопии комбинационного рассеяния. Экспериментальые данные интерпретируются в соответствии с моделью Фиваца и Шмидта для гомополярного оптического рассеяния. Наилучшая подгонка экспериментальных результав получается в предположении двумерного характера взаимодействия между электронами и фононами, модыA1, с энергией 14.5 мэВ. Двумерный характер, по-видимому, обусуовлен наличием большого числа плоских дефектов, которые сильно локализуют носители внутри слоев, что подтверждается наблюдениями электронной микроскопии.</abstract><subject lang="eng"><genre>PACS.72.10</genre><topic>Theory of electronic transport</topic><topic>scattering mechanisms</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Il Nuovo Cimento D</title></titleInfo><titleInfo><title>Il Nuovo Cimento D</title><partNumber>Year: 1985</partNumber><partNumber>Volume: 6</partNumber><partNumber>Number: 5</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1985-11-01</dateIssued><copyrightDate encoding="w3cdtf">1985</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Physics, general</topic></subject><identifier type="issn">0392-6737</identifier><identifier type="matrixNumber">11544</identifier><identifier type="local">IssueArticleCount: 9</identifier><recordInfo><recordOrigin>Società Italiana di Fisica, 1985</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02451897</identifier><identifier type="matrixNumber">Art1</identifier><identifier type="local">BF02451897</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>383</start><end>392</end></extent></part><recordInfo><recordOrigin>Società Italiana di Fisica, 1985</recordOrigin><recordIdentifier>11544_1985_Article_BF02451897.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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